FOR IMMEDIATE RELEASE
Contact: David Huff
Vice President, Sales and Business Development
I2R Nanowave Inc
+1 (610) 928-1038; dhuff@i2rnanowave.com
I2R Nanowave
Announces New High Power Broadband Amplifier
2-40GHz with over 1 Watt Output Power
24 July 2017, Macungie PA: I2R Nanowave Inc, a leading designer and manufacturer of
advanced microwave, millimeter-wave and electro-optic components and sub-systems,
is announcing the release of the NW0240-31, a broadband power amplifier module.
Based on I2R Nanowave proprietary Gallium Nitride (GaN) technology,
the amplifier exhibits over 1 Watt of saturated output power over the
incredibly broad 2-40GHz frequency range. Design for high saturated power, the
amplifier still exhibits better than 10 dB harmonic suppression and 15 dB
intermodulation product suppression at full power.
The NW0240-31 is a three stage, GaN based high power amplifier well
suited to Electronic Warfare applications. Available in custom form-factors for
integration into customer platforms, the amplifier provides 26dB of power gain
in a compact design. Based on Nanowave’s MHMIC ™ technology, the module can be
deployed in military and space environments.
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