Tuesday 25 July 2017

I2R Nanowave Announces Electronically Tunable Filter



FOR IMMEDIATE RELEASE

Contact: David Huff
Vice President, Sales and Business Development
I2R Nanowave Inc
+1 (610) 928-1038; dhuff@i2rnanowave.com

I2R Nanowave Announces Electronically Tunable Filter
Multi-Gigahertz Tuning, Narrow Passband, and Deep Rejection Bands

31 July 2017, Macungie PA: I2R Nanowave Inc, a leading designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems, is announcing the release of the INW-ETF, a rapidly tunable electronic filtering technology for signal discrimination. With fast tuning, sharp rejection bands, and narrow bandwidths, these filters can accommodate many uses in electronic warfare and in crowded spectrum applications.  

The INW-ETF electronically tunable filter (ETF) is an electronic scanning filter capable of agile frequency selection over multi GHz bandwidths. The ETF is ideal for signal analysis, signal discrimination and post-filtering applications. The ETF filter bandwidth and stop band rejection can be customized based on application. The ETF features sub-100uS tuning time with greater than 50dB stop band rejection at X band and a 3dB pass band of less than 200kHz.

Located in Macungie Pennsylvania, I2R Nanowave Inc. is a world-class designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems for Radar, Communications, and Space Applications. Our systems maintain compliance to AS9100C and ISO9001:2008 and ITAR registration. Our facility encompasses all the core capabilities needed for end-to-end microwave electronic product development, redesign and life cycle maintenance. Learn more about I2R Nanowave and these amplifiers at http://www.i2rnanowave.com/products/IntegratedAssemblies/NewTechnologies.php .

Friday 21 July 2017

I2R Nanowave Announces New High Power Broadband Amplifier




FOR IMMEDIATE RELEASE

Contact: David Huff
Vice President, Sales and Business Development
I2R Nanowave Inc
+1 (610) 928-1038; dhuff@i2rnanowave.com

I2R Nanowave Announces New High Power Broadband Amplifier
2-40GHz with over 1 Watt Output Power

24 July 2017, Macungie PA: I2R Nanowave Inc, a leading designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems, is announcing the release of the NW0240-31, a broadband power amplifier module. Based on I2R Nanowave proprietary Gallium Nitride (GaN) technology, the amplifier exhibits over 1 Watt of saturated output power over the incredibly broad 2-40GHz frequency range. Design for high saturated power, the amplifier still exhibits better than 10 dB harmonic suppression and 15 dB intermodulation product suppression at full power.  

The NW0240-31 is a three stage, GaN based high power amplifier well suited to Electronic Warfare applications. Available in custom form-factors for integration into customer platforms, the amplifier provides 26dB of power gain in a compact design. Based on Nanowave’s MHMIC ™ technology, the module can be deployed in military and space environments.

Located in Macungie Pennsylvania, IwR Nanowave Inc. is a world-class designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems for Radar, Communications, and Space Applications. Our systems maintain compliance to AS9100C and ISO9001:2008 and ITAR registration. Our facility encompasses all the core capabilities needed for end-to-end microwave electronic product development, redesign and life cycle maintenance. Learn more about I2R Nanowave and these amplifiers at http://www.i2rnanowave.com/products/SSPA/Broadband.php.